Infineon BC 846U E6327 BJTs - バイポーラトランジスタ NPN シリコン AF トランジスタアレイ

Width: 1.6 mm

Height: 1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 12.190 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 250 mW

Gain Bandwidth Product fT: 250 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 200 mV