Infineon BC817UPNE6327HTSA1 BJTs - バイポーラトランジスタ NPN シリコン AF トランジスタアレイ

Technology: Si

Unit Weight: 12.200 mg

Configuration: Dual

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 330 mW

DC Current Gain hFE Max: 400

Gain Bandwidth Product fT: 170 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 50 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 160

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 700 mV