Infineon BCR 133 E6433 デジタルトランジスタ NPN シリコン デジタルトランジスタ

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 200 mW

Typical Input Resistor: 10 kOhms

Typical Resistor Ratio: 1

DC Current Gain hFE Max: 30

Peak DC Collector Current: 100 mA

Emitter- Base Voltage VEBO: 50 V

Maximum Operating Frequency: 130 MHz

Continuous Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 50 V