Infineon BFN26E6327HTSA1 BJTs - バイポーラトランジスタ NPN シリコン ハイボルト トランジスタ

Width: 1.3 mm

Height: 1 mm

Length: 2.9 mm

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 360 mW

Gain Bandwidth Product fT: 70 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 300 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 500 mV