Infineon BFN27E6327HTSA1 BJTs - バイポーラトランジスタ PNP シリコン ハイボルト トランジスタ

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Qualification: AEC-Q100

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 360 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 300 V

Continuous Collector Current: 200 mA

Maximum DC Collector Current: 200 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 500 mV