Infineon BFP840FESDH6327XTSA1 RF シリコンゲルマニウム RF BIP トランジスター

Technology: SiGe

Unit Weight: 1.800 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Type: Bipolar

Operating Frequency: 85 GHz

Pd - Power Dissipation: 75 mW

Emitter- Base Voltage VEBO: 2.6 V

Continuous Collector Current: 35 mA

Maximum Operating Temperature: + 150 C

Collector- Emitter Voltage VCEO Max: 2.25 V