Infineon DF200R12W1H3FB11BOMA1 SiC IGBTモジュール 1200 V、30 A、EasyPACKのIGBTモジュール

Technology: Si

Unit Weight: 24 g

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.3 V

Continuous Collector Current at 25 C: 30 A