Infineon ETD510N16P60HPSA1 サイリスタ / ダイオード THYR / DIODE モジュール DK

Technology: Si

Unit Weight: 830 g

Configuration: SCR/Diode Phase Control

Mounting Style: Screw Mount

Transistor Polarity: N-Channel

Vr - Reverse Voltage: 1.6 kV

Holding Current Ih Max: 300 mA

Gate Trigger Current - Igt: 250 mA

Maximum Operating Temperature: + 135 C

Minimum Operating Temperature: - 40 C

Vgs th - Gate-Source Threshold Voltage: 800 mV