Infineon FF1000R17IE4B60BPSA1 IGBTモジュール 1700 V、1800 A デュアルIGBTモジュール

Technology: Si

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1 MW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 2.45 V

Continuous Collector Current at 25 C: 1 kA