Infineon FF1200XTR17T2P5PBPSA1 IGBTモジュール 1700 V、1200 A デュアルIGBTモジュール

Technology: Si

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 1.2 MW

Gate-Emitter Leakage Current: 400 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.7 kV

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 1.07 kA