Infineon FF900R12IP4PB60BPSA1 IGBTモジュール 1200 V、900 A デュアルIGBTモジュール

Technology: Si

Configuration: Dual

Mounting Style: Screw Mount

Pd - Power Dissipation: 5.1 kW

Gate-Emitter Leakage Current: 400 nA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.05 V

Continuous Collector Current at 25 C: 900 A