Infineon FP75R12N2T7B11BPSA2 IGBTシリコンモジュール 1200 V, 75 A PIM IGBTモジュール

Technology: Si

Configuration: 3-Phase Inverter

Gate-Emitter Leakage Current: 100 nA

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 1.55 V

Continuous Collector Current at 25 C: 75 A