Infineon GS66508B-MR GaN FETs 650V、30A、GaN Eモード、GaNPXパッケージ、ボトムサイド冷却

Fall Time: 5.2 ns

Rise Time: 3.7 ns

Technology: GaN-on-Si

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Development Kit: GS665MB-EVB, GS-EVB-HB-66508B-ON1, GSP665x-EVBIMS2, GS1200BTP-EVB, GSWP300W-EVBPA, GS66508B-EVBDB1

Transistor Type: E-Mode

Qg - Gate Charge: 6.1 nC

Moisture Sensitive: Yes

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Vgs - Gate-Source Voltage: - 10 V, + 7 V

Typical Turn-On Delay Time: 4.1 ns

Maximum Operating Frequency: > 10 MHz

Minimum Operating Frequency: 0 Hz

Typical Turn-Off Delay Time: 8 ns

Id - Continuous Drain Current: 30 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 63 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 1.1 V