Infineon IDH12G65C5XKSA2 ショットキーシリコンカーバイドダイオード SICダイオード

Technology: SiC

Unit Weight: 2 g

Configuration: Single

Mounting Style: Through Hole

If - Forward Current: 12 A

Ir - Reverse Current: 650 nA

Vf - Forward Voltage: 1.5 V

Vr - Reverse Voltage: 650 V

Pd - Power Dissipation: 104 W

Ifsm - Forward Surge Current: 97 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Vrrm - Repetitive Reverse Voltage: 650 V