Infineon IGT65R025D2ATMA1 CoolGaN トランジスタ HV GAN ディスクリート

Fall Time: 9 ns

Rise Time: 12 ns

Technology: GaN

Channel Mode: Enhancement

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 P-Channel

Qg - Gate Charge: 11 nC

Number of Channels: 1 Channel

Transistor Polarity: P-Channel

Pd - Power Dissipation: 236 W

Vgs - Gate-Source Voltage: - 10 V

Typical Turn-On Delay Time: 11 ns

Typical Turn-Off Delay Time: 18 ns

Id - Continuous Drain Current: 70 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 30 mOhms

Vds - Drain-Source Breakdown Voltage: 650 V

Vgs th - Gate-Source Threshold Voltage: 1.6 V