Infineon IRG4BC30SPBF IGBTトランジスタ 600V DC-1 KHZ (STD) ディスクリートIGBT

Width: 4.69 mm

Height: 8.77 mm

Length: 10.54 mm

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 100 W

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Continuous Collector Current Ic Max: 34 A

Collector-Emitter Saturation Voltage: 1.84 V

Continuous Collector Current at 25 C: 34 A