Infineon SMBTA06E6433HTMA1 BJTs - バイポーラトランジスタ NPN シリコン AF トランジスタ

Technology: Si

Unit Weight: 8 mg

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 330 mW

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 250 mV