IXYS IXA45IF1200HB IGBTトランジスタ Nチャネル: 高速ダイオード付きパワーMOSFET

Technology: Si

Unit Weight: 38 g

REACH - SVHC: Details

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 325 W

Gate-Emitter Leakage Current: 500 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 125 C

Minimum Operating Temperature: - 40 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Continuous Collector Current Ic Max: 45 A

Collector-Emitter Saturation Voltage: 1.8 V

Continuous Collector Current at 25 C: 78 A