IXYS IXGR55N120A3H1 IGBTトランジスタ 高周波範囲 40kHz C-IGBT ダイオード付き

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Gate-Emitter Leakage Current: 100 nA

Maximum Gate Emitter Voltage: 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 2.2 V

Continuous Collector Current at 25 C: 70 A