IXYS IXXK160N65C4 IGBTトランジスタ 650V/290A トレンチIGBT GenX4 XPT

Technology: Si

Unit Weight: 10.600 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 940 W

Gate-Emitter Leakage Current: 200 nA

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 650 V

Continuous Collector Current Ic Max: 160 A

Collector-Emitter Saturation Voltage: 1.7 V

Continuous Collector Current at 25 C: 290 A