Linear Integrated Systems LSK489-SOT-23-6L-CT JFET低ノイズ、低容量、モノリシックデュアル、NチャネルJFET

Technology: Si

Unit Weight: 16 mg

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: N-Channel

Pd - Power Dissipation: 500 mW

Gate-Source Cutoff Voltage: 8 mV

Maximum Drain Gate Voltage: 15 V

Drain-Source Current at Vgs=0: 5 mA

Id - Continuous Drain Current: 2 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 1000 uS

Vgs - Gate-Source Breakdown Voltage: - 60 V

Vds - Drain-Source Breakdown Voltage: 60 V