Macronix MX29LV800CBXEI-70GT/R フラッシュメモリ パラレル 3V/3.3V 8Mビット 1M x 8/512K x 16 70ns 48ピン CSP

Density: 8 Mbit

Package: 48CSP

Mounting: Surface Mount

Cell Type: NOR

Pin Count: 48

Boot Block: Yes

Interfaces: Parallel

Access Time: 70 ns

ECC Support: No

No. of Pins: 48

Architecture: Sectored

Interface Type: Parallel

Memory Density: 8 Mbit

OE Access Time: 30 ns

Number of Words: 1, 512 kWords

Program Current: 30 mA

Screening Level: Industrial

Supplier Package: CSP

Address Bus Width: 20, 19 Bit

Block Organization: Asymmetrical

Maximum Erase Time: 32/Chip s

Product Dimensions: 8 x 6 x 0.65 mm

Supply Voltage Nom: 3 V

Programming Voltage: 2.7 to 3.6 V

Operating Temperature: -40 to 85 °C

Location Of Boot Block: Bottom

Number of Bits per Word: 8, 16 Bit

Maximum Programming Time: 27000/Chip ms

Maximum Operating Current: 30 mA

Operating Temperature Max: 85 °C

Operating Temperature Min: -40 °C

Maximum Random Access Time: 70 ns

Simultaneous Read/Write Support: No

Typical Operating Supply Voltage: 3, 3.3 V

Erase Suspend/Resume Modes Support: Yes

Datasheet