Micro Commercial Components (MCC) MCU09N20-TP MOSFETs Nチャネル 増強型 FET 200Vds 30Vgss 83W 1.9Vgs

Fall Time: 11.1 ns

Rise Time: 10.7 ns

Technology: Si

Unit Weight: 360 mg

Channel Mode: Enhancement

REACH - SVHC: Details

Configuration: Single

Mounting Style: SMD/SMT

Transistor Type: 1 N- Channel

Qg - Gate Charge: 11.8 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 83 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Typical Turn-On Delay Time: 10.33 ns

Typical Turn-Off Delay Time: 29.1 ns

Id - Continuous Drain Current: 9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 9.2 S

Rds On - Drain-Source Resistance: 250 mOhms

Vds - Drain-Source Breakdown Voltage: 200 V

Vgs th - Gate-Source Threshold Voltage: 1 V