Microchip Technology 2N1485 BJTs - バイポーラトランジスタ 40V 3A 1.75W NPN パワーBJT THT

Technology: Si

Unit Weight: 9.124 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1.75 W

Emitter- Base Voltage VEBO: 12 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 3 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 750 mV