Microchip Technology 2N2219Ae3 BJTs - バイポーラトランジスタ 30V 800mA 800mW NPN 無鉛 小信号BJT THT

Technology: Si

Unit Weight: 3 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

DC Current Gain hFE Max: 325 at 1 mA, 10 V

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Maximum DC Collector Current: 800 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 50 at 100 uA, 10 V

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 300 mV