Microchip Technology 2N2369A BJTs - バイポーラトランジスタ 15V 200mA 680mW NPN 小信号BJT THT

Technology: Si

Unit Weight: 14.072 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 360 mW

Emitter- Base Voltage VEBO: 4.5 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 15 V

Collector-Emitter Saturation Voltage: 450 mV