Microchip Technology 2N2946AUB/TR BJTs - バイポーラトランジスタ 35V 200mA 400mW ラウンドエンド 小信号 BJT TR

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 400 mW

Emitter- Base Voltage VEBO: 40 V

Collector- Base Voltage VCBO: 40 V

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50 at - 1 mA, - 500 mV

Collector- Emitter Voltage VCEO Max: 40 V