Microchip Technology 2N3501e3 BJTs - バイポーラトランジスタ 150V 300mA 1W NPN 無鉛 小信号 BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 120

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 150 V

Continuous Collector Current: 300 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 35

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 200 mV