Microchip Technology 2N3743 BJTs - バイポーラトランジスタ 300V 200mA 1W パワーBJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 5 W

DC Current Gain hFE Max: 200

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 300 V

Continuous Collector Current: 200 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 300 V

Collector-Emitter Saturation Voltage: 1.2 V