Microchip Technology 2N3763 BJTs - バイポーラトランジスタ 60V 1.5A 500mW パワーBJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 80

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Continuous Collector Current: 1.5 A

Maximum DC Collector Current: 1.5 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 900 mV