Microchip Technology 2N3838/TR BJTs - バイポーラトランジスタ 40V 600mA デュアル小信号BJTトランジスタ

Technology: Si

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: NPN, PNP

Pd - Power Dissipation: 350 mW

DC Current Gain hFE Max: 300 at 150 mA, 10 V

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 35 at 100 uA, 10 V

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 400 mV