Microchip Technology 2N5152 BJTs - バイポーラトランジスタ 80V 2A 1W NPN パワーBJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 90 at 2.5 A, 5 VDC

Emitter- Base Voltage VEBO: 5.5 V

Collector- Base Voltage VCBO: 100 V

Maximum DC Collector Current: 2 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 30 at 2.5 A, 5 VDC

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 750 mV