Microchip Technology 2N5682e3 BJTs - バイポーラトランジスタ 120V 1A 1W NPN 無鉛パワーBJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

DC Current Gain hFE Max: 150

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 120 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 1 V