Microchip Technology 2N5954 BJTs - バイポーラトランジスタ パワーBJT

Technology: Si

Unit Weight: 12.083 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 40 W

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 90 V

Maximum DC Collector Current: 6 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 1 V