Microchip Technology 2N6284 ダーリントントランジスタ 100V 20A 160W NPN パワーBJT THT

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 175 W

Emitter- Base Voltage VEBO: 7 V

Maximum Operating Frequency: 1 MHz

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 20 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 8

Maximum Collector Cut-off Current: 10 uA

Collector- Emitter Voltage VCEO Max: 100 V