Microchip Technology 2N696 BJTs - バイポーラトランジスタ 40V 600mW NPN パワーBJT THT

Technology: Si

Unit Weight: 12.798 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 600 mW

DC Current Gain hFE Max: 60 at 150 mA, 10 VDC

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20 at 150 mA, 10 VDC

Collector- Emitter Voltage VCEO Max: 40 V

Collector-Emitter Saturation Voltage: 1.5 V