Microchip Technology APT13GP120BDQ1G IGBTトランジスタ IGBT PT MOS 7 コンビ 1200 V 13 A TO-247

Technology: Si

Unit Weight: 6 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 250 W

Maximum Gate Emitter Voltage: - 20 V, 20 V

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 1.2 kV

Collector-Emitter Saturation Voltage: 3.3 V

Continuous Collector Current at 25 C: 41 A