Microchip Technology APT75GN60BG IGBTトランジスタ IGBTフィールドストップ 低周波 単一 600 V 75 A TO-247

Technology: Si

Unit Weight: 16.790 g

Configuration: Single

Mounting Style: Through Hole

Pd - Power Dissipation: 536 W

Maximum Gate Emitter Voltage: - 30 V, 30 V

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 600 V

Collector-Emitter Saturation Voltage: 1.45 V

Continuous Collector Current at 25 C: 155 A