Microchip Technology ARF449AG RFパワーMOSFET RF MOSFET（VDMOS）500 V 90 W 120 MHz TO-247 コモンソース

Gain: 13 dB

Fall Time: 3 ns

Rise Time: 3.1 ns

Technology: Si

Unit Weight: 38 g

Channel Mode: Enhancement

Output Power: 90 W

Mounting Style: Through Hole

Operating Frequency: 120 MHz

Transistor Polarity: N-Channel

Pd - Power Dissipation: 165 W

Vgs - Gate-Source Voltage: + 30 V

Operating Temperature Range: - 55 C to + 150 C

Id - Continuous Drain Current: 9 A

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

Forward Transconductance - Min: 3 mS

Vds - Drain-Source Breakdown Voltage: 450 V

Vgs th - Gate-Source Threshold Voltage: 5 V