Microsemi Jan2N3700UB/TR BJTs - バイポーラトランジスタ 80V 1A 500mW ラウンドエンド 小信号 BJT TR

Technology: Si

Configuration: Single

Mounting Style: SMD/SMT

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 300

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 140 V

Continuous Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 100

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 500 mV