Microsemi Jan2N5686 BJTs - バイポーラトランジスタ 80V 50A 300W NPN パワーBJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 300 W

DC Current Gain hFE Max: 60

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: 50 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 30

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 5 V