Microsemi Jan2N6341 BJTs - バイポーラトランジスタ 150V 25A NPN パワーBJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 200 W

DC Current Gain hFE Max: 120

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 180 V

Continuous Collector Current: 25 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40

Collector- Emitter Voltage VCEO Max: 150 V

Collector-Emitter Saturation Voltage: 1.8 V