Microsemi JANS2N3019 BJTs - バイポーラトランジスタ 80V 1A 800mW 小信号BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 800 mW

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 140 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 80 V

Collector-Emitter Saturation Voltage: 200 mV