Microsemi JANSF2N2222AL BJTs - バイポーラトランジスタ 40V 800mA 500mW ロングリード RH 小信号 BJT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 325

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 75 V

Continuous Collector Current: 800 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 75

Collector- Emitter Voltage VCEO Max: 50 V

Collector-Emitter Saturation Voltage: 1 V