Microsemi Jantx2N2060 BJTs - バイポーラトランジスタ 60V 500mA 600mW NPN デュアル小信号BJT THT

Technology: Si

Unit Weight: 2.031 g

Configuration: Dual

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 600 mW

DC Current Gain hFE Max: 150

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 100 V

Continuous Collector Current: 500 mA

Maximum DC Collector Current: 500 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 50

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 300 mV