Microsemi Jantx2N2906A BJTs - バイポーラトランジスタ 40V 600mA 400mW PNP 小信号 BJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: PNP

Pd - Power Dissipation: 500 mW

DC Current Gain hFE Max: 175 at 1 mA, 10 VDC

Emitter- Base Voltage VEBO: 5 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 600 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 40 at 1 mA, 10 VDC

Collector- Emitter Voltage VCEO Max: 60 V

Collector-Emitter Saturation Voltage: 400 mV