Microsemi JANTX2n5682 BJTs - バイポーラトランジスタ 120V 1A 1W NPN パワーBJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 1 W

Emitter- Base Voltage VEBO: 4 V

Collector- Base Voltage VCBO: 120 V

Maximum DC Collector Current: 1 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 600 mV