Microsemi Jantx2N930 BJTs - バイポーラトランジスタ 45V 30mA 300mW NPN 小信号 BJT THT

Technology: Si

Unit Weight: 2.002 g

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 300 mW

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 60 V

Maximum DC Collector Current: 30 mA

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 55 C

Collector- Emitter Voltage VCEO Max: 45 V

Collector-Emitter Saturation Voltage: 1 V