Microsemi Jantxv2N5672 BJTs - バイポーラトランジスタ 120V 30A 6W NP パワーBJT THT

Technology: Si

Configuration: Single

Mounting Style: Through Hole

Transistor Polarity: NPN

Pd - Power Dissipation: 6 W

DC Current Gain hFE Max: 100

Emitter- Base Voltage VEBO: 7 V

Collector- Base Voltage VCBO: 150 V

Continuous Collector Current: 30 A

Maximum Operating Temperature: + 200 C

Minimum Operating Temperature: - 65 C

DC Collector/Base Gain hfe Min: 20

Collector- Emitter Voltage VCEO Max: 120 V

Collector-Emitter Saturation Voltage: 5 V