Nexperia BC856BS,115 BJTs - バイポーラトランジスタ 65 V、100 mA PNP/PNP 汎用トランジスタ

Width: 1.35 mm

Height: 1 mm

Length: 2.2 mm

Technology: Si

Unit Weight: 1 g

Configuration: Dual

Mounting Style: SMD/SMT

Transistor Polarity: PNP

Pd - Power Dissipation: 200 mW

DC Current Gain hFE Max: 200 at 2 mA, 5 V

Gain Bandwidth Product fT: 100 MHz

Emitter- Base Voltage VEBO: 6 V

Collector- Base Voltage VCBO: 80 V

Continuous Collector Current: - 100 mA

Maximum DC Collector Current: 100 mA

Maximum Operating Temperature: + 150 C

Minimum Operating Temperature: - 55 C

DC Collector/Base Gain hfe Min: 290

Collector- Emitter Voltage VCEO Max: 65 V

Collector-Emitter Saturation Voltage: 200 mV